2S2M, 2s4m the 2S2M and 2s4m are p-gate fully diffused mold scrs with an average on-current of 2 a. the repeat peak off-voltages (and reverse voltages) are 200 v and 400 v. features ? this transistor is designed for high-speed switching and is deal for use in commercial frequencies, high-frequency pulse applications, and inverter applications. this transistor features a small and lightweight package and is easy to handle even on the mounting surface due to its to-202aa dimensions. processing of lead wires and heatsink (tablet) using jigs is also possible. employs flame-retardant epoxy resin (ul94v-0). applications consumer electronic euipments, ignitors of devices for light indutry, inverter, and solenoid valve drives package drawing (unit: mm) absolute maximum ratings (ta = 25 c) parameter symbol 2S2M 2s4m ratings unit non-repetitive peak reverse voltage v rsm 300 500 v r gk = 1 k ? non-repetitive peak off-state voltage v dsm 300 500 v r gk = 1 k ? repetitive peak reverse voltage v rrm 200 400 v r gk = 1 k ? repetitive peak off-voltage v drm 200 400 v r gk = 1 k ? average on-state current i t(av) 2 (tc = 77 c, single half-wave, = 180 )a refer to figure 6 snd 7. surge on-state current i tsm 20 (f = 50 hz, sine half-wave, 1 cycle) a refer to figure 2. high-frequency peak on-state current i trm 15 (tc = 65 c, f = 10 kp.p.s, t p = 10 s) a ? fusing current i t 2 dt 1.6 (1 ms t 10 ms) a 2 s ? critical rate of rise of on-state current di t /dt 50 a/ s ? peak gate power dissipation p gm 0.5 (f 50 hz, duty 10%) w ? average gate power dissipation p g(av) 0.1 w peak gate forward current i fgm 0.2 (f 50 hz, duty 10%) a ? peak gate reverse voltage v rgm 6v ? junction temperature t j ? 40 to +125 c ? storage temperature t stg ? 55 tp +150 c ? electrode connection <1>cathode <2>anode <3>gate standard weight: 1.4 *tc test bench-mark www.kersemi.com
2S2M, 2s4m electrical characteristics (t j = 25 c, r gk = 1 k ? ? ? ? ) parameter symbol conditions specifications unit remarks min. typ. max. t j = 25 c 10 a ? repeat peak off-state current i drm v dm = v drm t j = 125 c 200 ? t j = 25 c 10 a ? repetitive peak reverse current i rrm v rm = v rrm t j = 125 c 200 v refer to figure 1. on voltage v tm t j = 25 c, i tm = 4 a ?? 2.2 v refer to figure 9. gate trigger voltage v gt v dm = 6 v, r l = 100 ??? 0.8 a refer to figure 8. gate trigger current i gt v dm = 6 v, r l = 100 ??? 300 v ? gate non-trigger voltage v gd t j = 125 c, v dm = 1 2 v drm 0.2 ?? v ? critical rate of-rise of off- state voltage d v /dt t j = 125 c, v dm = 2 3 v drm 10 ?? v/ s ? holding current i h t j = 25 c, v d = 24 v ?? 10 ma ? commutating turn-off time t q t j = 125 c, i t = 2 a v dm = 2 3 v drm , v r = 50 v d v /dt = 10 v/ s ? 15 s turn-on time t gt t j = 125 c, v dm = 2 3 v drm i tm = 30 a i g = 5 ma, t 1g = 5 s ?? 2 s ? r th(j-c) junction-to-case dc ?? 10 c/w refer to figure 13. thermal resistance r th(j-a) junction-to-ambient dc ?? 75 typical characteristics (ta = 25 c) www.kersemi.com
2S2M, 2s4m www.kersemi.com
2S2M, 2s4m www.kersemi.com
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